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MMIC Solutions

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Core Chip

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Matrix Switch

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RFcore has been developing GaN-based MMIC solutions for active phased array system pursuing higher performance (Power and Efficiency) and reliability in a smallest form factor with the help of the wide bandgap GaN semiconductor. We have tried our best to provide the GaN MMIC colutions at an affordable cost to meet the market needs.

ItemDescriptionPerformanceSize (mm)Package Type
RCA020180D38AWide-Band Amplifier Chip

- Operation Frequency: 2.0~18.0 GHz

- Small Signal Gain: 12 dB

- Psat: 38 dBm

- Power Gain: 8 dB

- Power Added Efficiency: 15 %

6.0 x 6.0QFN
RCA085105D42AX-Band Amplifier Chip

- Operation Frequency: 8.5~10.5 GHz

- Small Signal Gain: 23 dB

- Psat: 42 dBm

- Power Gain: 20 dB

- Power Added Efficiency: 30 %

6.0 x 6.0QFN
RCA085100D33JX-Band Amplifier Chip

- Operation Frequency: 8.5~10.0 GHz

- Small Signal Gain: 19 dB

- Psat: 33 dBm

- Power Gain: 13 dB

- Power Added Efficiency: 26 %

4.0 x 4.0QFN
RCA085100D33KX-Band Amplifier Chip

- Operation Frequency: 8.5~10.0 GHz

- Small Signal Gain: 11 dB

- Psat: 33 dBm

- Power Gain: 7 dB

- Power Added Efficiency: 30 %

3.0 x 3.0QFN
RCA053055D40AC-Band Front-End Chip

- Operation Frequency: 5.3~5.5 GHz

Tx

- Small Signal Gain: 26 dB

- Psat: 40 dBm

- Power Gain: 18 dB

- Power Added Efficiency: 27 %

Rx

- Small Signal Gain: 18 dB

- Noise Figure: 2.6 dB

5.0 x 5.0QFN
RCA085100D40AX-Band Front-End Chip

- Operation Frequency: 8.5~10.0 GHz

Tx

- Small Signal Gain: 34 dB

- Psat: 40 dBm

- Power Gain: 23 dB

- Power Added Efficiency: 26 %

Rx

- Small Signal Gain: 15 dB

- Noise Figure: 2.9 dB

5.0 x 5.0QFN
RCA085100D40HX-Band Front-End Chip

- Operation Frequency: 8.5~10.0 GHz

Tx

- Small Signal Gain: 26 dB

- Psat: 40 dBm

- Power Gain: 27 dB

- Power Added Efficiency: 22 %

Rx

- Small Signal Gain: 16 dB

- Noise Figure: 2.9 dB

6.0 x 6.0QFN
RCA085100RxAX-Band Front-End Chip LNA + Switch (without PA)

- Operation Frequency: 8.5~10.0 GHz

Rx

- Small Signal Gain: 15 dB

- Noise Figure: 2.9 dB

4.0 x 4.0QFN
RCS001070D50A50W High Power Switch

- Operation Frequency: 0.1~7.0 GHz

- Pmax: 50 dBm

- Insertion Loss: 0.9 dB typ.

- Isolation: 21 dB

5.0 x 5.0QFN
RCS001070D46A40W High Power Switch

- Operation Frequency: 0.1~7.0 GHz

- Pmax: 46 dBm

- Insertion Loss: 0.7 dB typ.

- Isolation: 23 dB

5.0 x 5.0QFN
HEAD OFFICE

C-708, Bundang Technopark, 744, Pangyo-ro, Bundang-gu, Seongnam-si, Gyeonggi-do, Republic of Korea, ZipCode : 13510

Phone

+82-31-708-7575 (HQ)

SUPPORT
General inquirles

sales@rfcore.com

Career

hongdh@rfcore.com

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